- 您现在的位置：买卖IC网 > Datasheet目录404 > DMG4496SSS-13 (Diodes Inc)MOSFET N-CH 30V 10A SO8 Datasheet资料下载
参数资料
| 型号： | DMG4496SSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 10A SO8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 21.5 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 493.5pF @ 15V |
| 功率 - 最大： | 1.42W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMG4496SSS-13DIDKR |
DMG4496SSS
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±25
Unit
V
V
Continuous Drain Current (Note 6)
Steady
State
T A = +25°C
T A = +85°C
I D
10
6
A
Pulsed Drain Current (Note 7)
Avalanche Current (Notes 7 & 8)
Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH
I DM
I AR
E AR
60
8
3.2
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 6)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
1.42
88.49
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
—
—
—
—
—
—
1
±100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ±25V, V DS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS(ON)
|Y fs |
V SD
0.8
—
—
—
1.2
16
22
11.7
0.70
2.0
21.5
29
—
1
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 10A
V GS = 4.5V, I D = 7.5A
V DS = 5V, I D = 10A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
—
—
493.5
94.5
50.4
2.86
4.7
10.2
1.4
1.7
4.76
3.64
19.5
4.9
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
?
nC
nC
nC
ns
ns
ns
ns
V DS =15V, V GS = 0V,
f = 1.0MHz
V DS =0V, V GS = 0V, f = 1MHz
V DS = 15V, V GS = 4.5V, ID =10A
V DS = 15V, V GS = 10V, ID =10A
V GS = 10V, V Ds = 15V,
R G = 6 ? , R L = 15 ? ,
6. Device mounted on 1 in. FR-4 board with 2oz. Copper, in a still air environment @ T A = +25°C. The value in any given application depends on the
Notes:
2
user's specific board design.
7. Repetitive rating, pulse width limited by junction temperature.
8. I AR and E AR rating are based on low frequency and duty cycles to keep T J = 25°C
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
DMG4496SSS
Document number: DS32048 Rev. 5 - 2
2 of 6
www.diodes.com
September 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMG4511SK4-13 | MOSFET N/P-CH 35V TO252-4L |
| DMG4710SSS-13 | MOSFET N-CH 30V 12.7A SO8 |
| DMG4712SSS-13 | MOSFET N-CH 30V 11.2A 8SOIC |
| DMG4800LFG-7 | MOSFET N-CH 30V 7.44A 8DFN |
| DMG4800LK3-13 | MOSFET N-CH 30V 10A TO252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMG4511SK4 | 制造商:Diodes Incorporated 功能描述:MOSFET NP CH COM PAIR 35V TO2524L 制造商:Diodes Incorporated 功能描述:MOSFET, NP CH, COM PAIR, 35V, TO2524L 制造商:Diodes Incorporated 功能描述:MOSFET, NP CH, COM PAIR, 35V, TO2524L, Transistor Polarity:N and P Channel, Continuous Drain Current Id:8.6A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.025ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:1.54W , RoHS Compliant: Yes |
| DMG4511SK4-13 | 功能描述:MOSFET MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMG4511SK4-7 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. |
| DMG4710SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE |
| DMG4710SSS-13 | 功能描述:MOSFET MOSFET N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。