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| 型号： | DMG4406LSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 30V 10.3A SO-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26.7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1281pF @ 15V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | DMG4406LSS-13DIDKR |
DMG4406LSS
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±20
Units
V
V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 6) V GS = 4.5V
Steady
State
t<10s
Steady
State
t<10s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
10.3
8.3
13.4
10.6
9.3
7.3
12.0
9.5
A
A
A
A
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH
I S
I DM
I AR
E AR
2.5
90
22
24
A
A
A
mJ
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Symbol
P D
Value
1.5
Units
W
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
R ? JA
P D
R θ JA
R θ JC
T J, T STG
80
48
2.0
61
37
6.4
-55 to 150
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
—
—
—
—
—
—
1
±100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1.4
—
—
—
—
—
8
12
32
0.70
2.0
11
15
-
1.0
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 12A
V GS = 4.5V, I D = 10A
V DS = 5V, I D = 12A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
t rr
Q rr
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1281
145
125
1.2
12.5
26.7
3.6
4.4
5.2
21.2
22.3
5.1
8.5
7.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
?
nC
ns
ns
nC
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V DS = 15V, I D = 12A
V DD = 15V, V GS = 10V,
R L = 1.25 ? , R G = 3 ? ,
IF=12A, di/dt=500A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I AR and E AR rating are based on low frequency and duty cycles to keep T J = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMG4406LSS
Document number: DS35539 Rev. 8 - 2
2 of 6
www.diodes.com
September 2013
? Diodes Incorporated
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