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| 型号： | DMG6898LSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 20V 9.5A SO8 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 9.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1149pF @ 10V |
| 功率 - 最大： | 1.28W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | DMG6898LSD-13DIDKR |
DMG6898LSD
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±12
Unit
V
V
Continuous Drain Current (Note 4)
Pulsed Drain Current (Note 5)
Steady
State
T A = 25°C
T A = 85°C
I D
I DM
9.5
7.1
30
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 4)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
1.28
99.3
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
-
-
-
-
-
-
1.0
±10
V
μ A
μ A
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ±12V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
0.5
-
-
-
1.0
11
17
17
0.7
1.5
16
23
-
1.2
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 4.5V, I D = 9.4A
V GS = 2.5V, I D = 8.3A
V DS = 5V, I D = 9.4A
V GS = 0V, I S = 1.3A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
-
1149
157
142
1.51
11.6
26
2.7
3.4
11.67
12.49
35.89
12.33
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
V DS = 10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 10V,
I D = 9.4A
V DD = 10V, V GS = 4.5V,
R GEN = 6 ? , I D = 1A
Notes:
4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMG6898LSD
Document number: DS31947 Rev. 4 - 2
2 of 6
www.diodes.com
March 2012
? Diodes Incorporated
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