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参数资料
| 型号： | DMMT3906-7-F |
| 厂商： | DIODES INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | GREEN, PLASTIC PACKAGE-6 |
| 文件页数： | 2/4页 |
| 文件大小： | 162K |
| 代理商： | DMMT3906-7-F |
DS30293 Rev. 5 - 2
2 of 4
DMMT3906
www.diodes.com
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
-40
-40
-5.0
V
V
V
nA
nA
I
C
= -10
m
A, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10
m
A, I
C
= 0
V
CE
= -30V, V
EB(OFF)
= -3.0V
V
CE
= -30V, V
EB(OFF)
= -3.0V
-50
-50
ON CHARACTERISTICS (Note 7)
DC Current Gain (Note 8)
h
FE
60
80
100
60
30
300
I
C
= -100μA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.25
-0.40
V
Base-Emitter Saturation Voltage
V
BE(SAT)
-0.65
-0.85
-0.95
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
4.5
10
12
10
400
60
pF
pF
k
W
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
2.0
0.1
100
3.0
V
= 10V, I
C
= 1.0mA,
f = 1.0kHz
x 10
-4
m
S
Current Gain-Bandwidth Product
f
T
250
MHz
V
= -20V, I
C
= -10mA,
f = 100MHz
V
CE
= -5.0V, I
C
= -100
m
A,
R
S
= 1.0k
W,
f = 1.0kHz
Noise Figure
NF
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t
d
t
r
t
s
t
f
35
35
225
75
ns
ns
ns
ns
V
CC
= -3.0V, I
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
V
CC
= -3.0V, I
= -10mA,
I
B1
= I
B2
= -1.0mA
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. The DC current gain, h
FE
, is matched at I
C
= -10mA and V
CE
= -1.0V with typical matched tolerances of 1% and maximum of 2%.
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Year
Code
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Date Code Key
K3Q
YM
K3Q = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Marking Information
相关PDF资料 |
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|---|---|
| DMMT3906W-7-F | MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DMMT5401_1 | MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DMMT5401-7-F | MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DMMT5551-7-F | MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DMMT5551S-7-F | MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMMT3906-T | 功能描述:两极晶体管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| DMMT3906-TP | 功能描述:两极晶体管 - BJT 200mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| DMMT3906W | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DMMT3906W_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DMMT3906W_2 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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