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参数资料
型号： DMMT5401-7-F
厂商： DIODES INC
元件分类： 功率晶体管
英文描述： MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 200 mA, 150 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封装： GREEN, PLASTIC PACKAGE-6
文件页数： 2/4页
文件大小： 176K
代理商： DMMT5401-7-F
DS30437 Rev. 5 - 2
2 of 4
DMMT5401
www.diodes.com
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
-160
-150
-5.0
V
V
V
nA
m
A
nA
I
C
= -100
m
A, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10
m
A, I
C
= 0
V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
A
= 100
°
C
V
EB
= -3.0V, I
C
= 0
Collector Cutoff Current
I
CBO
-50
Emitter Cutoff Current
I
EBO
-50
ON CHARACTERISTICS (Note 7)
DC Current Gain (Note 8)
h
FE
50
60
50
240
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -50mA, V
CE
= -5.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.2
-0.5
V
Base-Emitter Saturation Voltage
V
BE(SAT)
-1.0
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
6.0
pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
= -10V, I
C
= -1.0mA,
f = 1.0kHz
V
= -10V, I
C
= -10mA,
f = 100MHz
V
CE
= -5.0V, I
C
= -200
m
A,
R
S
= 10
W,
f = 1.0kHz
Small Signal Current Gain
h
fe
40
200
Current Gain-Bandwidth Product
f
T
100
300
MHz
Noise Figure
NF
8.0
dB
Ordering Information
(Note 6 & 9)
Device
Packaging
SOT-26
Shipping
3000/Tape & Reel
DMMT5401-7-F
Notes: 6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
7. Short duration pulse test used to minimize self-heating effect.
8. The DC Current Gain, h
FE
, (matched at I
C
= -10mA and V
CE
= -5V) Collector Emitter Saturation Voltage, V
CE(SAT)
, and Base
Emitter Saturation Voltage, V
BE(SAT)
are matched with typical matched tolerances of 1% and maximum of 2%.
9. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K4S
YM
K4S = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Year
Code
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
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相关代理商/技术参数
参数描述
DMMT5401-TP 功能描述:TRANSISTOR PNP 200MA 150V SOT363 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402
DMMT5551 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DMMT5551_1 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DMMT5551_2 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DMMT5551-7 功能描述:两极晶体管 - BJT MATCHED NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
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