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参数资料
| 型号： | DMMT5551-7-F |
| 厂商： | DIODES INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 200 mA, 160 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | GREEN, PLASTIC PACKAGE-6 |
| 文件页数： | 4/4页 |
| 文件大小： | 101K |
| 代理商： | DMMT5551-7-F |
DS30436 Rev. 7 - 2
4 of 4
DMMT5551/DMMT5551S
www.diodes.com
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmess against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMMT5551S | 制造商:Diodes Incorporated 功能描述:TRANS NPNNPN MAT 180V 0.2A SOT26 制造商:Diodes Incorporated 功能描述:TRANS, NPNNPN MAT, 180V, 0.2A, SOT26 制造商:Diodes Incorporated 功能描述:TRANS, NPNNPN MAT, 180V, 0.2A, SOT26, Transistor Polarity:NPN, Collector Emitter 制造商:Diodes Incorporated 功能描述:TRANS, NPNNPN MAT, 180V, 0.2A, SOT26, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:160V, Power Dissipation Pd:300mW, DC Collector Current:200mA, DC Current Gain hFE:80, Operating Temperature Min:-55C, No. of Pins:6 , RoHS Compliant: Yes |
| DMMT5551S-13 | 制造商:Diodes Incorporated 功能描述:P-CHANNEL, SOT-23, 60V, LL, 8OHM,130MA, SMT - Tape and Reel |
| DMMT5551S-13-F | 制造商:Diodes Incorporated 功能描述:TRANS GP BJT NPN 160V 0.2A 6PIN SOT-26 - Tape and Reel |
| DMMT5551S-7 | 功能描述:两极晶体管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| DMMT5551S-7-F | 功能描述:两极晶体管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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