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参数资料
| 型号： | DMN100-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.1A SC59-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 240 毫欧 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 5.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 150pF @ 10V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SC-59-3 |
| 包装： | 剪切带 (CT) |
| 其它名称： | DMN100 DMN100CT DMN100CT-ND DMN100DICT |
DMN100
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Extremely Low On-Resistance: 170m Ω @ V GS = 4.5V
High Drain Current: 1.1A
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
ESD Protected Gate
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SC59
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.014 grams (approximate)
Drain
SC59
D
Gate
Gate
Protection
Diode
Source
G
S
ESD PROTECTED
Top View
Equivalent Circuit
Top View
Ordering Information (Note 3)
Part Number
DMN100-7-F
Case
SC59
Packaging
3000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
M11 = Product Type Marking Code
M11
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2006
T
Jan
1
2007
U
Feb
2
2008
V
Mar
3
2009
W
Apr
4
2010
X
May
5
2011
Y
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN100
Document number: DS30049 Rev. 9 - 2
1 of 4
www.diodes.com
March 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN100-7-F | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN1019UFDE | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:12V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN1019UFDE-7 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN1033UCB4-7 | 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 8V-24V U-WLB1818-4 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET N-CH 12V4 |
| DMN113.3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | CHIP |
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