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参数资料
| 型号： | DMN100-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.1A SC59-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 240 毫欧 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 5.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 150pF @ 10V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SC-59-3 |
| 包装： | 剪切带 (CT) |
| 其它名称： | DMN100 DMN100CT DMN100CT-ND DMN100DICT |
DMN100
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Characteristic
Symbol
V DSS
Value
30
Units
V
Gate-Source Voltage
Drain Current
Continuous
Continuous
Pulsed
V GSS
I D
± 20
1.1
4.0
V
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
500
250
-55 to +150
Units
mW
K/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV DSS
30
—
—
V
V GS = 0V, I D = 250 μ A
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T J = 25 ° C
@ T J = 125°C
I DSS
I GSS
—
—
—
—
1.0
10
± 100
μ A
nA
V DS = 24V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V GS(th)
R DS (ON)
g FS
1.0
—
1.3
—
—
2.4
3.0
0.170
0.150
?
V
Ω
S
V DS = 10V, I D = 1.0mA
V GS = 4.5V, I D = 0.5A
V GS = 10V, I D = 1.0A
V DS = 10V, I D = 0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
C iss
C oss
C rss
Q g
Q gs
Q gd
—
—
—
—
—
—
150
90
30
5.5
0.8
1.3
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
V DS = 10V, V GS = 0V
f = 1.0MHz
V DS = 24V, I D = 1.0A,
V GS = 10V
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t D(ON)
—
10
—
ns
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
t D(OFF)
t r
t f
—
—
—
25
15
45
—
—
—
ns
ns
ns
V DD = 10V, I D = 0.5A,
V GS = 5.0V, R GEN = 50 Ω
SOURCE-DRAIN RATINGS (BODY DIODE)
Continuous Source Current
Pulse Source Current
Forward Voltage
Reverse Recovery Time
I S
I SM
V SD
t rr
—
—
—
—
—
—
—
35
0.54
4.0
1.2
—
A
A
V
ns
—
—
I F = 1.0A, V GS = 0V
I F = 1.0A, di/dt = 50A/ μ s
Notes:
4. Pulse width ≤ 300 μ s, duty cycle ≤ 2%.
DMN100
Document number: DS30049 Rev. 9 - 2
2 of 4
www.diodes.com
March 2012
? Diodes Incorporated
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