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参数资料
型号： DMN100
厂商： Diodes Inc.
英文描述： N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
中文描述： N沟道增强型场效应管
文件页数： 2/3页
文件大小： 63K
代理商： DMN100
DS30049 Rev. 5 - 2
2 of 3
DMN100
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
BV
DSS
30
V
V
GS
= 0V, I
D
= 250 A
Zero Gate Voltage Drain Current
@ T
j
= 25 C
@ T
j
= 125 C
I
DSS
1.0
10
100
μA
V
DS
= 24V, V
GS
= 0V
Gate-Body Leakage
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
I
GSS
nA
V
GS
=
12V, V
DS
= 0V
V
GS(th)
1.0
3.0
0.170
0.240
V
V
DS
= 10V, I
D
=1.0mA
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 10V, I
D
= 1.0A
V
DS
= 10V, I
D
=0.5A
Static Drain-Source On-Resistance
R
DS (ON)
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
SOURCE- DRAIN RATINGS (BODY DIODE)
Continuous Source Current
Pulse Source Current
Forward Voltage
Reverse Recovery Time
g
FS
1.3
2.4
S
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
150
90
30
5.5
0.8
1.3
pF
pF
pF
nC
nC
nC
V
= 10V, V
GS
= 0V
f = 1.0MHz
V
DS
= 24V, I
D
= 1.0A,
V
GS
= 10V
t
D(ON)
t
D(OFF)
t
r
t
f
10
25
15
45
ns
ns
ns
ns
V
DD
= 10V, I
D
= 0.5A,
V
GS
= 5.0V, R
GEN
= 50
I
S
I
SM
V
SD
t
rr
0.54
4.0
1.2
A
A
V
ns
I
F
= 1.0A, V
GS
= 0V
I
F
= 1.0A, di/dt = 50A/ s
35
Notes:
1. Pulse width
300 s, duty cycle
2%.
Ordering Information
(Note 2)
Device
DMN100-7
Packaging
SC-59
Shipping
3000/Tape & Reel
Notes:
Marking Information
XXX X
XXX = Product Type Marking Code
X = Assembly Lot No.
[0-9, A-Z, except G, I, J, O, Q, W]
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相关代理商/技术参数
参数描述
DMN100_0711 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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