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参数资料
| 型号： | DMN2004DWK |
| 厂商： | Diodes Inc. |
| 英文描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 双N沟道增强型场效应晶体管 |
| 文件页数： | 2/4页 |
| 文件大小： | 151K |
| 代理商： | DMN2004DWK |
Notes: 5. Short duration test pulse used to minimize self-heating effect.
DS30935 Rev. 2 - 2
2 of 4
DMN2004DWK
www.diodes.com
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
GSS
20
V
A
V
GS
= 0V, I
D
= 10 A
V
DS
= 16V, V
GS
= 0V
V
GS
= 4.5V, V
DS
= 0V
1
1
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
A
V
GS(th)
0.5
1.0
V
V
DS
= V
GS
, I
D
= 250 A
V
GS
= 4.5V, I
D
= 540mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
Static Drain-Source On-Resistance
R
DS (ON)
0.4
0.5
0.7
0.55
0.70
0.9
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
|Y
fs
|
V
SD
200
0.5
ms
V
1.4
C
iss
C
oss
C
rss
150
25
20
pF
pF
pF
V
= 16V, V
GS
= 0V
f = 1.0MHz
0
0
1
2
3
4
5
V
Fig. 1 Typical Output Characteristics
DRAIN-SOURCE VOLTAGE (V)
DS
,
I
D
D
,
0.3
0.6
0.9
V
= 1.2V
GS
V
= 1.8V
GS
V
= 2.0V
GS
V
= 2.2V
GS
V
= 1.4V
GS
V
= 1.6V
GS
V
, GATE-SOURCE VOLTAGE (V)
Fig. 2
Reverse Drain Current
vs. Source-Drain Voltage
GS
100
0
1000
I
D
D
200
300
400
500
600
700
800
900
0.4
0.8
1.2
1.6
2
V
Pulsed
= 10V
DS
T = 150 C
°
T = -55 C
°
T = 5 C
8
°
T = 25 C
°
T , CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
V
G
G
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-75
-50
-25
0
25
50
75
100
125
150
V
= 10V
I = 1mA
Pulsed
DS
0.1
I
DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
D
,
1
0.2
0.4
0.6
0.8
1.0
V
Pulsed
= 10V
GS
T = 150 C
°
T = -55 C
°
T = -25 C
°
T = 0 C
°
T = 25 C
°
T = 125 C
°
T = 85 C
°
N
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2004DWK_0711 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004DWK-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2004K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004K_10 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004K-7 | 功能描述:MOSFET 20V 540mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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