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| 型号： | DMN2004K-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 540MA SOT23-3 |
| 产品变化通告： | Encapsulate Change 15/May/2008 Copper Bond Wire Change 3/May/2011 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 630mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 550 毫欧 @ 540mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 150pF @ 16V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN2004KDIDKR |
DMN2004K
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±8
Units
V
V
Drain Current (Note 5) V GS = 4.5V
Drain Current (Note 5) V GS = 1.8V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
T A = +25°C
T A = +85°C
T A = +25°C
T A = +85°C
I D
I D
I DM
630
450
410
300
1.5
mA
mA
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
350
357
-65 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
?
?
?
?
?
?
1
? 1
V
μA
μA
V GS = 0V, I D = 10μA
V DS = 16V, V GS = 0V
V GS = ? 4.5V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
0.5
?
1.0
V
V DS = V GS , I D = 250μA
0.4
0.55
V GS = 4.5V, I D = 540mA
Static Drain-Source On-Resistance
R DS(ON)
?
0.5 ?
0.70
?
V GS = 2.5V, I D = 500mA
0.7
0.9
V GS = 1.8V, I D = 350mA
Forward Transfer Admittance
Source Current
Diode Forward Voltage (Note 7)
|Y fs |
I S
V SD
200
?
0.6
?
?
?
?
0.5
1
ms
A
V
V DS =10V, I D = 0.2A
?
V GS = 0V, I S = 500mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
?
150
pF
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
t rr
Q rr
?
?
?
?
?
?
?
?
?
?
?
?
?
?
292
0.9
0.2
0.2
5.7
8.4
59.4
37.6
5.5
0.85
25
20
?
?
?
?
?
?
?
?
?
?
pF
pF
?
nC
ns
ns
nC
V DS = 16V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V DS = 15V, V GS = 4.5V, I D = 0.5A
V GS = 8V, V DS = 15V,
R G = 6 ? , R L = 30 ?
I S = 0.5A, dI/dt = -100A/μs
I S = 0.5A, dI/dt = -100A/μs
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
6. Pulse width ≤ 10μS, Duty Cycle ≤ 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN2004K
Document number: DS30938 Rev. 9 - 2
2 of 6
www.diodes.com
July 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2004VK-7 | MOSFET DUAL N-CHAN 20V SOT-563 |
| DMN2004WK-7 | MOSFET N-CH 20V 540MA SC70-3 |
| DMN2005DLP4K-7 | MOSFET DUAL N-CH 6-DFN |
| DMN2005K-7 | MOSFET N-CH 20V 300MA SOT23-3 |
| DMN2005LP4K-7 | MOSFET N-CH 20V 200MA 3-DFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2004K-7-F | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:Product specification |
| DMN2004TK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2004TK-7 | 功能描述:MOSFET 20V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2004VK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2004VK_10 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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