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参数资料
| 型号： | DMN2005K |
| 厂商： | Diodes Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | N沟道增强型场效应管 |
| 文件页数： | 4/4页 |
| 文件大小： | 219K |
| 代理商： | DMN2005K |
Ordering Information
(Note 6)
N
Device
DMN2005K-7
Packaging
SOT-23
Shipping
3000/Tape & Reel
Notes:
6. For packaging details, please go to our website at http://www.diodes.com/ap02007.pdf.
Marking Information
DM
Y
DM = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30734 Rev. 3 - 2
4 of 4
www.diodes.com
DMN2005K
Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2005K-7 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LP4K | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LP4K-7 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LPK | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LPK-7 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2005K_0711 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005K-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2005LP4K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LP4K_09 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2005LP4K-7 | 功能描述:MOSFET 30V 300mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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