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参数资料
| 型号： | DMN2065UW-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 20V 2.8A SOT323 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 56 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 400pF @ 10V |
| 功率 - 最大： | 430mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SOT-323 |
| 包装： | 标准包装 |
| 其它名称： | DMN2065UW-7DIDKR |
DMN2065UW
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
20V
R DS(ON) max
56m ? @ V GS = 4.5V
65m ? @ V GS = 2.5V
93m ? @ V GS = 1.8V
I D max
T A = 25°C
2.8A
2.6A
2.2A
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Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 standards for High Reliability
140m ? @ V GS = 1.5V
Description and Applications
1.8A
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
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Case: SOT323
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
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General Purpose Interfacing Switch
Power Management Functions
DC-DC Converters
Analog Switch
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Terminal Connections Indicator: See diagram
Terminals: Finish ? Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.027 grams (approximate)
Drain
SOT323
Gate
D
Source
G
S
Top View
Ordering Information (Note 3)
Part Number
DMN2065UW-7
Notes:
1. No purposefully added lead.
Equivalent Circuit
Case
SOT323
Top View
Packaging
3000/Tape & Reel
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMH = Product Type Marking Code
DMH
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN2065UW
Document number: DS35554 Rev. 1 – 2
1 of 6
www.diodes.com
October 2011
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN2075U-7 | MOSFET N-CH 20V 4.2A SOT23 |
| DMN2075UDW-7 | MOSFET N-CH 20V 2.8A SOT363 |
| DMN2100UDM-7 | MOSFET N-CH 20V 3.3A SOT-26 |
| DMN2104L-7 | MOSFET N-CH 20V 4.3A SOT-23 |
| DMN2112SN-7 | MOSFET N-CH 20V 1.2A SC59-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN2075U | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2075U-7 | 功能描述:MOSFET P-Ch -20V VDSS Enchanced Mosfet RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2075UDW-7 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V SOT363,3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2100UDM | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN2100UDM-7 | 功能描述:MOSFET 900mW 20Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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