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参数资料
| 型号： | DMN26D0UT-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 230MA SOT523 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 230mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 欧姆 @ 100mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 14.1pF @ 15V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-523 |
| 供应商设备封装： | SOT-523 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN26D0UT-7DIDKR |
DMN26D0UT
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
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Low On-Resistance:
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Case: SOT-523
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3.0 Ω @ 4.5V
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Case Material: Molded Plastic, “Green” Molding Compound. UL
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? 4.0 Ω @ 2.5V
? 6.0 Ω @ 1.8V
? 10 Ω @ 1.5V
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Lead, Halogen, and Antimony Free By Design/RoHS
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Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.002 grams (approximate)
Compliant (Note 2)
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"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Gate
Drain
D
Gate
Protection
Diode
Source
G
S
ESD PROTECTED
TOP VIEW
EQUIVALENT CIRCUIT
TOP VIEW
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Symbol
V DSS
V GSS
I D
Value
20
± 10
230
Unit
V
V
mA
Pulsed Drain Current
T P = 10μs
I DM
805
mA
Thermal Characteristics
@T A = 25°C unless otherwise specified
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
P D
R θ JA
T J , T STG
300
417
-55 to +150
mW
° C/W
° C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN26D0UT
Document number: DS31854 Rev. 2 - 2
1 of 6
www.diodes.com
September 2009
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN26DOUT-7 | 制造商:Diodes Incorporated 功能描述:MOSFET N-CHANNEL SOT-523 GREEN 3K |
| DMN2990UDJ | 制造商:Diodes Incorporated 功能描述:MOSFET NN CH W ESD 20V SOT963 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W ESD, 20V, SOT963 |
| DMN2990UDJ-7 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V SOT963,10K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN2990UFA-7B | 功能描述:MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3005LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
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