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| 型号： | DMN2990UFA-7B |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 20V 510MA |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 510mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 990 毫欧 @ 100mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 27.6pF @ 16V |
| 功率 - 最大： | 400mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-X2-DFN0806 |
| 包装： | 标准包装 |
| 其它名称： | DMN2990UFA-7BDIDKR |
DMN2990UFA
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
20
±8
Units
V
V
Continuous Drain Current (Note 5) V GS = 4.5V
Continuous Drain Current (Note 5) V GS = 1.8V
Pulsed Drain Current (Note 6)
Steady
State
t<10s
Steady
State
t<10s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = 70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
I DM
510
410
610
490
380
300
450
360
800
mA
mA
mA
mA
mA
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Steady state
Steady state
t<10s
P D
R ? JA
T J, T STG
400
310
220
-55 to +150
mW
°C/W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
20
—
—
V
V GS = 0V, I D = 250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T C = +25°C
I DSS
I GSS
—
—
—
—
—
—
100
50
±100
nA
nA
V DS = 16V, V GS = 0V
V DS = 5V, V GS = 0V
V GS = ±5V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
0.4
—
1.0
V
V DS = V GS , I D = 250 μ A
—
—
0.60
0.75
0.99
1.2
V GS = 4.5V, I D = 100mA
V GS = 2.5V, I D = 50mA
Static Drain-Source On-Resistance
R DS(ON)
—
0.90
1.8
Ω
V GS = 1.8V, I D = 20mA
—
—
1.2
2.0
2.4
—
V GS = 1.5V, I D = 10mA
V GS = 1.2V, I D = 1mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
180
-
—
0.6
—
1.0
mS
V
V DS = 10V, I D = 400mA
V GS = 0V, I S = 150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
27.6
4.0
2.8
0.5
0.07
0.07
4.0
3.3
19.0
6.4
55.2
8.0
5.6
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V DS = 16V, V GS = 0V,
f = 1.0MHz
V GS = 4.5V, V DS = 10V,
I D = 250mA
V DD = 10V, V GS = 4.5V,
R L = 47 ? , R G = 10 ? ,
I D = 200mA
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN2990UFA
Document number: DS35765 Rev. 3 - 2
2 of 6
www.diodes.com
June 2013
? Diodes Incorporated
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