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| 型号： | DMN3024LSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6.4A SO8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 608pF @ 15V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN3024LSS-13DIDKR |
A Product Line of
Diodes Incorporated
DMN3024LSS
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
(Note 3)
Symbol
V DSS
V GS
Value
30
± 20
8.5
Unit
V
V
Continuous Drain current
V GS = 10V
T A = 70°C (Note 3)
I D
6.8
A
(Note 2)
6.4
Pulsed Drain current
V GS = 10V
(Note 4)
I DM
36
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
(Note 4)
I S
I SM
4.5
36
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 2)
(Note 3)
(Note 2)
(Note 3)
(Note 5)
P D
R θ JA
R θ JL
T J , T STG
1.6
12.5
2.8
22.2
80
45
35
-55 to 150
W
mW/ ° C
° C/W
° C/W
° C
Notes:
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead): the device is operating in a steady-state condition.
DMN3024LSS
Document Revision: 3
2 of 8
www.diodes.com
July 2009
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN3024SFG-7 | MOSFET N-CH 30V 7.5A PWRDI3333-8 |
| DMN3029LFG-7 | MOSFET N-CH 30V 5.3A PWRDI333-8 |
| DMN3030LSS-13 | MOSFET N-CH 30V 9A 8-SOIC |
| DMN3031LSS-13 | MOSFET N-CH 30V 9A 8SOP |
| DMN3033LDM-7 | MOSFET N-CH 30V 6.9A SOT-26 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN3024SFG | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3024SFG-13 | 功能描述:MOSFET 30V N-Ch ENH Mode PowerDI 7.5A - 6.3A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3024SFG-7 | 功能描述:MOSFET MOSFET BVDSS: 25V-30 PowerD3333-8,2K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3025LFG | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3025LFG-13 | 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 25V-30V POWERDI3333-8 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET N-CH 30V POWERDI3333-8 |
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