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参数资料
| 型号： | DMN3031LSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 9A 8SOP |
| 产品目录绘图： | DMN Series Top DMN Series Side 1 DMN Series Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 18.5 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 2.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 741pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN3031LSSDIDKR |
NOT RECOMMENDED FOR NEW DESIGN
USE DMN3030LSS
DMN3031LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Low On-Resistance
? 18.5m ? @ V GS = 10V
? 31m ? @ V GS = 4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072g (approximate)
SOP-8L
TOP VIEW
S
S
S
G
TOP VIEW
Internal Schematic
D
D
D
D
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
± 20
Units
V
V
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Steady
State
T A = 25°C
T A = 70°C
I D
I DM
9
6.75
40
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Device mounted on 2 oz copper pad layout with R θ JA = 50 °C/W.
Notes:
1.
2.
No purposefully added lead.
Pulse width ≤ 10 μ S, Duty Cycle ≤ 1%.
3.
Symbol
P D
R θ JA
T J, T STG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
4.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN3031LSS
Document number: DS31650 Rev. 4 - 3
1 of 6
www.diodes.com
December 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN3033LDM-7 | MOSFET N-CH 30V 6.9A SOT-26 |
| DMN3033LSD-13 | MOSFET N-CH 30V 6.9A 8-SOIC |
| DMN3033LSN-7 | MOSFET N-CH 30V 6A SC59-3 |
| DMN3050S-7 | MOSFET N-CH 30V 5.2A SOT-23 |
| DMN3051L-7 | MOSFET N-CH 30V 5.8A SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN3033LDM | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3033LDM-7 | 功能描述:MOSFET NMOS-SINGLE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3033LSD | 制造商:Diodes Incorporated 功能描述:MOSFET NN CH W DIOD 30V 6.9A SO8 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W DIOD, 30V, 6.9A, SO8 |
| DMN3033LSD-13 | 功能描述:MOSFET NMOS-DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3033LSN | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
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