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参数资料
| 型号： | DMN3033LSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6.9A 8-SOIC |
| 产品变化通告： | Bond Wire Change 11/Nov/2011 |
| 标准包装： | 2,500 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 22 毫欧 @ 6.9A，10V |
| Id 时的 Vgs(th)（最大）： | 2.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 725pF @ 15V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
DMN3033LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V (BR)DSS
30V
R DS(ON) max
20m ? @ V GS = 10V
27m ? @ V GS = 4.5V
I D max
T A = +25°C
6.9A
5.8A
?
?
?
?
?
?
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
?
?
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
?
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
? Case: SO-8
?
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Applications
? Backlighting
? Power Management Functions
?
?
?
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
?
DC-DC Converters
SO-8
S1
D1
?
Weight: 0.072grams (approximate)
D1
D2
G1
S2
D1
D2
G1
G2
Top View
G2
D2
Top View
Internal Schematic
S1
N-channel MOSFET
S2
N-channel MOSFET
Ordering Information (Note 4)
Part Number
DMN3033LSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
8
5
8
5
= Manufacturer’s Marking
N3033LD
YY WW
N3033LD
YY WW
N3033LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
1
4
1
4
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Chengdu A/T Site
Shanghai A/T Site
DMN3033LSD
Document number: DS31262 Rev. 9 - 2
1 of 6
www.diodes.com
February 2014
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN3033LSN-7 | MOSFET N-CH 30V 6A SC59-3 |
| DMN3050S-7 | MOSFET N-CH 30V 5.2A SOT-23 |
| DMN3051L-7 | MOSFET N-CH 30V 5.8A SOT23-3 |
| DMN3052L-7 | MOSFET N-CH 30V 5.4A SOT23-3 |
| DMN3052LSS-13 | MOSFET N-CH 30V 7.1A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN3033LSN | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3033LSN-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3033LSS-13 | 功能描述:MOSFET SINGLE N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3050S | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3050S-7 | 功能描述:MOSFET SINGLE N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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