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参数资料
| 型号： | DMN3029LFG-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 5.3A PWRDI333-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 18.6 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 1.8V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 580pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerVDFN |
| 供应商设备封装： | PowerDI3333-8 |
| 包装： | 标准包装 |
| 其它名称： | DMN3029LFG-13DIDKR |
DMN3029LFG
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI ?
Product Summary
Features
V (BR)DSS
R DS(ON)
I D
T A = 25°C
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?
Low R DS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
30V
18.6m ? @ V GS = 10V
26.5m ? @ V GS = 4.5V
8.0A
6.5A
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?
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
100% UIS (Avalanche) rated
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?
100% Rg tested
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Description
This new generation MOSFET has been designed to minimize the on-
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?
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
Mechanical Data
applications.
Applications
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?
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Case: POWERDI3333-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
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?
?
Backlighting
DC-DC Converters
Power management functions
POWERDI3333-8
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?
?
S
Terminal Connections: See Diagram Below
Terminals: Finish ? Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
Pin 1
S
S
1
8
G
D
2
3
7
6
D
D
4
5
D
Top View
Ordering Information (Note 4)
Part Number
DMN3029LFG-7
DMN3029LFG-13
Bottom View
Case
POWERDI3333-8
POWERDI3333-8
Top View
Internal Schematic
Packaging
2000 / Tape & Reel
3000 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
N39 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 10 for 2010)
WW = Week code (01 – 53)
POWERDI is a registered trademark of Diodes Incorporated.
DMN3029LFG
Document number: DS35448 Rev. 7 - 2
1 of 7
www.diodes.com
October 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN3029LFG-7 | 功能描述:MOSFET N-CH 30V 5.3A PWRDI333-8 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| DMN3030LFG-7 | 功能描述:MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3030LSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3030LSS-13 | 功能描述:MOSFET NMOS SINGLE N-CHANNL 30V 9A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3031LSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET |
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