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| 型号： | DMN3029LFG-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 5.3A PWRDI333-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 18.6 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 1.8V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 580pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerVDFN |
| 供应商设备封装： | PowerDI3333-8 |
| 包装： | 标准包装 |
| 其它名称： | DMN3029LFG-13DIDKR |
DMN3029LFG
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±25
Unit
V
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 6) V GS = 4.5V
Continuous Drain Current (Note 6) V GS = 4.5V
Steady
State
Steady
State
t ≤ 10s
Steady
State
t ≤ 10s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
I D
5.3
4.2
8.0
6.3
9.5
7.7
6.5
4.9
7.8
6.2
A
A
A
A
A
Pulsed Drain Current (Note 7)
Avalanche Current (Notes 7 & 8)
Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH
I DM
I AR
E AR
70
18
16
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 6)
Power Dissipation (Note 6) t ≤ 10s
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 6) t ≤ 10s
Operating and Storage Temperature Range
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
Symbol
P D
R θ JA
P D
R θ JA
P D
R θ JA
T J , T STG
Max
1.0
130.6
2.07
62.5
3.0
43.8
-55 to +150
Unit
W
°C/W
W
°C/W
W
°C/W
°C
6. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature.
8. I AR and E AR rating are based on low frequency and duty cycles to keep T J = +25°C.
100
R DS(on)
P W = 10μ s
400
10
Limited
DC
350
300
250
Single Pulse
R θ JA = 60 ° C/W
R θ JA(t) = r (t) * R θ JA
T J - T A = P * R θ JA(t)
1
0.1
P W = 10s
P W = 1s
P W = 100ms
P W = 10ms
P W = 1ms
P W = 100μs
T J(max) = 150°C
T A = 25°C
Single Pulse
200
150
100
50
0.01
0.1
1
10
100
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
POWERDI is a registered trademark of Diodes Incorporated.
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
DMN3029LFG
Document number: DS35448 Rev. 7 - 2
2 of 7
www.diodes.com
October 2012
? Diodes Incorporated
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