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| 型号： | DMN3051L-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 5.8A SOT23-3 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 38 毫欧 @ 5.8A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 424pF @ 5V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN3051LDIDKR |
DMN3051L
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±20
Units
V
V
Continuous Drain Current (Note 6) V GS = 10V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 6)
Steady
State
t<5s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I DM
I S
4.5
3.5
5.8
4.9
20
2
A
A
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T A = +25°C
T A = +70°C
Steady state
t < 5s
T A = +25°C
T A = +70°C
Steady state
t < 5s
P D
R ? JA
P D
R ? JA
R ? JC
T J, T STG
0.7
0.44
182
109
1.4
0.85
94
56
25
-55 to +150
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
30
?
?
?
?
?
?
800
? 80
? 800
V
nA
nA
V GS = 0V, I D = 250μA
V DS = 28V, V GS = 0V
V GS = ±12V, V DS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
V GS(th)
R DS(ON)
|Y fs |
V SD
1.3
??
?
?
?
1.9
33
54
5
0.78
2.2
38
64
?
1.16
V
m ?
S
V
V DS = V GS , I D = 250 μA
V GS = 10V, I D = 5.8A
V GS = 4.5V, I D = 5.0A
V DS = 5V, I D = 3.1A
V GS = 0V, I S = 2.0A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
??
??
??
??
??
??
??
??
424
115
81
1.51
9.0
1.3
1.3
3.4
6.2
13.9
2.8
?
?
?
??
??
??
??
??
??
??
??
pF
pF
pF
?
nC
nC
nC
ns
ns
ns
ns
V DS = 5V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 10V, V DS = 15V, I D = 5.8A
V DD = 15V, V GS = 10V,
R L = 2.6 ? , R G = 3 ?
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN3051L
Document number: DS31347 Rev. 5 - 2
2 of 6
www.diodes.com
October 2013
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN3051LDM | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3051LDM-7 | 功能描述:MOSFET 30V 4A N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3052L | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN3052L-7 | 功能描述:MOSFET 1.4W 30V 5.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3052LSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET |
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