- 您现在的位置：买卖IC网 > Datasheet目录406 > DMN3110S-7 (Diodes Inc)MOSFET N-CH 30V 2.5A SOT-23 Datasheet资料下载
参数资料
| 型号： | DMN3110S-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 2.5A SOT-23 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 73 毫欧 @ 3.1mA，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 305.8pF @ 15V |
| 功率 - 最大： | 740mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 标准包装 |
| 其它名称： | DMN3110S-7DIDKR |
DMN3110S
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±20
Units
V
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 6) V GS = 4.5V
Pulsed Drain Current (Note 7)
Steady
State
Steady
State
t ≦ 10sec
Steady
State
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
I DM
2.5
2.0
3.3
2.7
3.8
3.1
2.7
2.1
25
A
A
A
A
A
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 6) t ≦ 10sec
Thermal Resistance, Junction to Ambient (Note 6) t ≦ 10sec
Operating and Storage Temperature Range
Symbol
P D
R ? JA
P D
R ? JA
P D
R ? JA
T J, T STG
Value
0.74
173.4
1.3
99.1
1.8
72
-55 to +150
Units
W
°C/W
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV DSS
30
-
-
V
V GS = 0V, I D = 250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T C = +25°C
I DSS
I GSS
-
-
-
-
1.0
±100
μ A
nA
V DS = 30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
V GS(th)
R DS (ON)
|Y fs |
V SD
1.0
-
-
-
-
-
54
88
4.8
0.75
3.0
73
110
-
1.0
V
m ?
mS
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 3.1A
V GS = 4.5V, I D = 2A
V DS = 10V, I D = 3.1A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
-
305.8
39.9
39.5
1.4
4.1
8.6
1.2
1.5
2.6
4.6
13.1
2.5
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V,f = 1.0MHz
V GS = 10V, V DS = 10V,
I D = 3A
V DD = 15V, V GS = 10V,
R L = 47 ? , R G = 3 ? ,
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, on 1inch square copper plate
7. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN3110S
Document number: DS31561 Rev. 3 - 2
2 of 6
www.diodes.com
October 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN3112S-7 | MOSFET N-CH 30V 5.8A SOT23-3 |
| DMN3112SSS-13 | MOSFET N-CH 30V 6A 8SOP |
| DMN3115UDM-7 | MOSFET N-CH 30V 3.2A SOT-26 |
| DMN3135LVT-7 | MOSFET N CH 30V 4.1A TSOT26 |
| DMN3150L-7 | MOSFET N-CH 28V 3.2A SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN3112S | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN3112S-7 | 功能描述:MOSFET 1.4W 30V 5.8A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3112SQ-7 | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET Low Input Capacitance |
| DMN3112SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3112SSS-13 | 功能描述:MOSFET SINGLE N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。