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| 型号： | DMN3150L-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 28V 3.2A SOT23-3 |
| 产品变化通告： | Wire Change 23/May/2008 Encapsulate Change 15/May/2008 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 28V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 3.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 305pF @ 5V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN3150LDIDKR |
DMN3150L
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Drain Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
? 12
Unit
V
V
Drain Current (Note 5)
Drain Current (Note 5)
Body-Diode Continuous Current (Note 5)
T A = +25°C
T A = +70°C
Pulsed
I D
I DM
I S
3.8
3.1
15
2.0
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R ? JA
T J, T STG
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
30
?
?
?
?
?
?
800
? 80
? 800
V
nA
nA
V GS = 0V, I D = 250 μ A
V DS = 28V, V GS = 0V
V GS = ±12V, V DS = 0V
V GS = ±19V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
0.62
??
?
?
?
0.92
39
52
90
3
?
1.4
54
72
115
?
1.16
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 3.8A
V GS = 4.5V, I D = 3.6A
V GS = 2.5V, I D = 3.1A
V DS = 5V, I D = 3.1A
V GS = 0V, I S = 2.0A
DYNAMIC CHARACTERISTICS (Note 7)
Gate Resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
C iss
C oss
C rss
-
-
-
-
-
-
-
-
-
?
?
?
4.17
8.2
3.7
0.7
1.1
1.14
3.49
15.02
3.26
305
74
48
-
-
-
-
-
-
-
-
-
?
?
?
?
nC
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V DS =0V, V GS = 0V,
f = 1MHz
V GS = 10 V, V DS = 10V,
I D = 3.8 A
V GS =4.5 V, V DS = 10V,
I D = 3.8 A
V DD = 15V, V GEN = 10V,
R GEN = 6 ? , R L = 3.9 ?
V DS = 5V, V GS = 0V
f = 1.0MHz
Notes:
5. Device mounted on FR-4 PCB. t ≤ 5 sec.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMN3150L
Document number: DS31126 Rev. 9 - 2
2 of 5
www.diodes.com
October 2013
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
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| DMN3150LW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN3150LW-7 | 功能描述:MOSFET 0.35W 28V 1.6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| DMN3200U-7 | 功能描述:MOSFET 650mW 30Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN32D2LDF | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMMON SOURCE DUAL N-CHANNEL |
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