- 您现在的位置：买卖IC网 > Datasheet目录406 > DMN32D2LV-7 (Diodes Inc)MOSFET N-CH DUAL 30V SOT-563 Datasheet资料下载
参数资料
| 型号： | DMN32D2LV-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V SOT-563 |
| 产品变化通告： | Bond Wire Change 11/Nov/2011 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 400mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.2 欧姆 @ 100mA，4V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 39pF @ 3V |
| 功率 - 最大： | 400mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 标准包装 |
| 其它名称： | DMN32D2LV-7DIDKR |
DMN32D2LV
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
?
?
?
?
?
?
?
?
?
?
Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.2V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
?
?
?
?
?
?
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
SOT-563
D 2
S 2
G 1
G 2
S 1
D 1
ESD PROTECTED
Ordering Information (Note 4)
Part Number
DMN32D2LV-7
TOP VIEW
Case
SOT-563
TOP VIEW
Schematic and Transistor Diagram
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
D 2
G 1
S 1
DV = Product Type Marking Code (See Note 6)
DV YM
YM = Date Code Marking
Y = Year (ex: U = 2007)
S 2
G 2
D 1
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN32D2LV
Document number: DS31121 Rev. 7 - 2
1 of 6
www.diodes.com
January 2014
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN3300U-7 | MOSFET N-CH 30V 2A SOT23-3 |
| DMN3404L-7 | MOSFET N-CH 30V 5.8A SOT-23 |
| DMN3730U-7 | MOSFET N-CH 30V 750MA SOT23 |
| DMN3730UFB-7 | MOSFET N-CH 30V 750MA DFN |
| DMN3730UFB4-7 | MOSFET N-CH 30V 750MA DFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN3300U | 制造商:Diodes Incorporated 功能描述:MOSFET N CH W DIODE 30V 2A SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIODE, 30V, 2A, SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIODE, 30V, 2A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:600mW ;RoHS Compliant: Yes |
| DMN3300U-7 | 功能描述:MOSFET 600mW 30Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3300U-7-F | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:Product specification |
| DMN3404L | 制造商:Diodes Incorporated 功能描述: |
| DMN3404L-7 | 功能描述:MOSFET N-CHANNEL ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。