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| 型号： | DMN32D2LV-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V SOT-563 |
| 产品变化通告： | Bond Wire Change 11/Nov/2011 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 400mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.2 欧姆 @ 100mA，4V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 39pF @ 3V |
| 功率 - 最大： | 400mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 标准包装 |
| 其它名称： | DMN32D2LV-7DIDKR |
DMN32D2LV
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Characteristic
Symbol
V DSS
V GSS
I D
Value
30
? 10
400
Unit
V
V
mA
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
P D
R θ JA
T J , T STG
400
313
-55 to +150
mW
? C/W
? C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
30
?
?
V
V GS = 0V, I D = 250 μ A
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage (Note 7)
@ T J = +25°C
@ T J = +25°C
@ T J = +105°C
@ T J = +125°C
I DSS
I GSS
I GSS
?
?
?
?
??
??
? 1
? 8
? 15
1
? 10
? 500
? 100
? 100
? 100
? A
? A
nA
nA
nA
nA
V DS = 30V, V GS = 0V
V GS = ±10V, V DS = 0V
V GS = ±5V, V DS = 0V
V GS = ±2.5V, V DS = 0V
V GS = ±2.5V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
0.6
??
??
?
100
0.5
?
??
??
?
?
?
1.2
2.2
1.5
1.2
?
1.4
V
?
mS
V
V DS = V GS , I D = 250 μ A
V GS = 1.8V, I D = 20mA
V GS = 2.5V, I D = 20mA
V GS = 4.0V, I D = 100mA
V DS =10V, I D = 0.1A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
39
10
3.6
?
?
?
pF
pF
pF
V DS = 3V, V GS = 0V
f = 1.0MHz
Switching Time
Turn-on Time
Turn-off Time
t on
t off
??
??
11
51
??
??
nS
nS
V DD = 5V, I D = 10 mA,
V GS = 5V
Notes:
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMN32D2LV
Document number: DS31121 Rev. 7 - 2
2 of 6
www.diodes.com
January 2014
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
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| DMN3300U | 制造商:Diodes Incorporated 功能描述:MOSFET N CH W DIODE 30V 2A SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIODE, 30V, 2A, SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIODE, 30V, 2A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:600mW ;RoHS Compliant: Yes |
| DMN3300U-7 | 功能描述:MOSFET 600mW 30Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3300U-7-F | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:Product specification |
| DMN3404L | 制造商:Diodes Incorporated 功能描述: |
| DMN3404L-7 | 功能描述:MOSFET N-CHANNEL ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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