- 您现在的位置：买卖IC网 > Datasheet目录406 > DMN3730UFB4-7 (Diodes Inc)MOSFET N-CH 30V 750MA DFN Datasheet资料下载
参数资料
| 型号： | DMN3730UFB4-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 750MA DFN |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 750mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 460 毫欧 @ 200mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 64.3pF @ 25V |
| 功率 - 最大： | 470mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-DFN |
| 包装： | 标准包装 |
| 其它名称： | DMN3730UFB4-7DKR |
A Product Line of
Diodes Incorporated
DMN3730UFB4
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
0.6mm package footprint, 10 times smaller than SOT23
V (BR)DSS
30V
R DS(on)
460m ? @ V GS = 4.5V
560m ? @ V GS = 2.5V
I D
T A = +25°C
0.9A
0.7A
?
?
?
?
?
0.4mm ultra low profile package for thin application
2
Low V GS(th), can be driven directly from a battery
Low R DS(on)
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Description
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
?
?
?
Halogen and Antimony Free. “Green” Device (Note 3)
ESD Protected Gate 2kV
Qualified to AEC-Q101 Standards for High Reliability
ideal for high efficiency power management applications.
Mechanical Data
Applications
?
?
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
?
Load Switch
UL Flammability Classification Rating 94V-0
?
?
Portable Applications
Power Management Functions
?
?
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e3
?
Weight: 0.001 grams (approximate)
Drain
X2-DFN1006-3
D
S
G
Gate
Gate
Body
Diode
ESD PROTECTED TO 2kV
Bottom View
Top View
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN3730UFB4-7
DMN3730UFB4-7B
Marking
NF
NF
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN3730UFB4-7
DMN3730UFB4-7B
NF
Top View
Dot Denotes
Drain Side
DMN3730UFB4
Document number: DS35017 Rev. 5 - 2
NF
Top View
Bar Denotes Gate
and Source Side
1 of 6
www.diodes.com
NF = Product Type Marking Code
July 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN4027SSD-13 | MOSFET 2N-CH 40V 5.4A SO8 |
| DMN4027SSS-13 | MOSFET N-CH 40V 6A SO8 |
| DMN4030LK3-13 | MOSFET N-CH 40V 9.4A DPAK |
| DMN4031SSD-13 | MOSFET DL N-CH 40V 5.2A SO-8 |
| DMN4034SSD-13 | MOSFET 2N-CH 40V 4.8A SO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN3730UFB4-7B | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN3730UFB-7 | 功能描述:MOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN3900UFA-7B | 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 25V-30V X2-DFN0806-3 T&R 10K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET N CH 30V 550MA DMN3900 |
| DMN4009LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4009LK3-13 | 功能描述:MOSFET N-CH 40V 18A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。