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| 型号： | DMN3730UFB4-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 750MA DFN |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 750mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 460 毫欧 @ 200mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 64.3pF @ 25V |
| 功率 - 最大： | 470mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-DFN |
| 包装： | 标准包装 |
| 其它名称： | DMN3730UFB4-7DKR |
A Product Line of
Diodes Incorporated
DMN3730UFB4
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±8
Unit
V
Continuous Drain Current
Pulsed Drain Current
(Note 6)
V GS = 4.5V T A = +70°C (Note 6)
(Note 5)
(Note 7)
I D
I DM
0.91
0.73
0.75
3
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 6)
(Note 5)
(Note 6)
(Note 5)
P D
R θ JA
T J , T STG
0.69
0.47
180
258
-55 to +150
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
—
—
—
—
—
—
1
3
V
μA
μA
V GS = 0V, I D = 10 μ A
V DS = 30V, V GS = 0V
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V GS(th)
0.45
—
0.95
V
V DS = V GS , I D = 250 μ A
—
—
460
V GS = 4.5V, I D = 200mA
Static Drain-Source On-Resistance (Note 8)
Forward Transfer Admittance
Diode Forward Voltage (Note 8)
R DS(on)
|Y fs |
V SD
—
—
40
—
—
—
—
0.7
560
730
—
1.2
m ?
mS
V
V GS = 2.5V, I D = 100mA
V GS = 1.8V, I D = 75mA
V DS = 3V, I D = 10mA
V GS = 0V, I S = 300mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
—
64.3
6.1
4.5
70
1.6
0.2
0.2
3.5
2.8
38
13
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
?
nC
nC
nC
ns
ns
ns
ns
V DS = 25V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 15V,
I D = 1A
V DS = 10V, I D = 1A
V GS = 10V, R G = 6 Ω
Notes:
5. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in
steady-state condition.
6. Same as note 4, except the device measured at t ? 10 sec.
7. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10 ? s.
8. Measured under pulsed conditions to minimize self-heating effect. Pulse width ? 300μs; duty cycle ? 2%
9. For design aid only, not subject to production testing.
DMN3730UFB4
Document number: DS35017 Rev. 5 - 2
2 of 6
www.diodes.com
July 2013
? Diodes Incorporated
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相关代理商/技术参数 |
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|---|---|
| DMN3730UFB4-7B | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET |
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| DMN4009LK3-13 | 功能描述:MOSFET N-CH 40V 18A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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