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参数资料
| 型号： | DMN4030LK3-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 9.4A DPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 604pF @ 20V |
| 功率 - 最大： | 2.14W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN4030LK3-13DIDKR |
A Product Line of
Diodes Incorporated
DMN4030LK3
40V N-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
Features and Benefits
V (BR)DSS
40V
R DS(on)
30m Ω @ V GS = 10V
50m Ω @ V GS = 4.5V
I D
T A = 25 ° C
13.7A
10.6A
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Low on-resistance
Fast switching speed
“Green” component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
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Case: TO252-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
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Backlighting
DC-DC Converters
Power management functions
TO252-3L
D
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Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (approximate)
D
G
G
D
S
S
TOP VIEW
Ordering Information (Note 1)
PIN OUT -TOP VIEW
Equivalent Circuit
Product
DMN4030LK3-13
Marking
N4030L
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
Notes:
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
YYWW
N4030L
= Manufacturer’s Marking
N4030L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
DMN4030LK3
Document Number DS32008 Rev. 3 - 2
1 of 8
www.diodes.com
March 2010
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN4031SSD-13 | MOSFET DL N-CH 40V 5.2A SO-8 |
| DMN4034SSD-13 | MOSFET 2N-CH 40V 4.8A SO8 |
| DMN4034SSS-13 | MOSFET N-CH 40V 5.4A SO8 |
| DMN4036LK3-13 | MOSFET N-CH 40V 8.5A DPAK |
| DMN4060SVT-7 | MOSFET N-CH 45V 4.8A TSOT26 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN4031SSD-13 | 功能描述:MOSFET MOSFET BVDSS: 31V-40 SO-8,2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN4034SSD | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4034SSD-13 | 功能描述:MOSFET MOSFET,N-CHANNEL 40V, 4.8A/- 6.3A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN4034SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4034SSS-13 | 功能描述:MOSFET MOSFET,N-CHANNEL 40V, 5.5A/- 7.2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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