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| 型号： | DMN4034SSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 40V 4.8A SO8 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 34 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 453pF @ 20V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 产品目录页面： | 1473 (CN2011-ZH PDF) |
| 其它名称： | DMN4034SSD-13DKR |
A Product Line of
Diodes Incorporated
DMN4034SSD
40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
40V
R DS(on)
34m Ω @ V GS = 10V
59m Ω @ V GS = 4.5V
I D
T A = 25 ° C
6.3A
4.8A
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100% Unclamped Inductive Switch (UIS) test in production
Low on-resistance
Fast switching speed
Max Q g rated
“Green” component and RoHS compliant (Note 1)
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Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
Mechanical Data
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
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Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
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Motor control
Backlighting
DC-DC Converters
Power management functions
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Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
SO-8
S1
G1
S2
G2
D1
D1
D2
D2
G1
D1
S1
G2
D2
S2
Top View
Ordering Information (Note 1)
Top View
Equivalent Circuit
Product
DMN4034SSD-13
Marking
N4034SD
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
Notes:
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
= Manufacturer’s Marking
N4034SD
N4034SD = Product Type Marking Code
YYWW = Date Code Marking
YY
WW
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
DMN4034SSD
Document Number DS32105 Rev 2 - 2
1 of 9
www.diodes.com
January 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN4034SSS-13 | MOSFET N-CH 40V 5.4A SO8 |
| DMN4036LK3-13 | MOSFET N-CH 40V 8.5A DPAK |
| DMN4060SVT-7 | MOSFET N-CH 45V 4.8A TSOT26 |
| DMN4800LSS-13 | MOSFET N-CH 30V 9A 8SOP |
| DMN4800LSSL-13 | MOSFET N-CH 30V 8A SO-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN4034SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4034SSS-13 | 功能描述:MOSFET MOSFET,N-CHANNEL 40V, 5.5A/- 7.2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN4036LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4036LK3_10 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4036LK3-13 | 功能描述:MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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