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| 型号： | DMN4034SSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 40V 4.8A SO8 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 34 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 453pF @ 20V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 产品目录页面： | 1473 (CN2011-ZH PDF) |
| 其它名称： | DMN4034SSD-13DKR |
A Product Line of
Diodes Incorporated
DMN4034SSD
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source voltage
Characteristic
Symbol
V DSS
Value
40
Unit
V
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
(Note 2)
(Note 9)
(Note 9)
V GS
E AS
I AS
± 20
27
15.25
V
mJ
A
(Note 4)
6.3
Continuous Drain current
V GS = 10V
T A = 70°C (Note 4)
I D
5.0
A
(Note 3)
4.8
Pulsed Drain current
V GS = 10V
(Note 5)
I DM
24.8
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 4)
(Note 5)
I S
I SM
3.3
24.8
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
(Notes 3 & 6)
Symbol
Value
1.25
10.0
Unit
Power dissipation
Linear derating factor
(Notes 3 & 7)
P D
1.80
14.3
W
mW/ ° C
(Notes 4 & 6)
(Notes 3 & 6)
2.14
17.2
100
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Notes 3 & 7)
(Notes 4 & 6)
(Notes 6 & 8)
R θ JA
R θ JL
T J , T STG
70
58
55
-55 to 150
° C/W
° C
Notes:
2. AEC-Q101 V GS maximum is ± 16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t ≤ 10 sec.
5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
6. For a dual device with one active die.
7. For a device with two active die running at equal power.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
9. UIS in production with L = 100μH, V DD = 40V.
DMN4034SSD
Document Number DS32105 Rev 2 - 2
2 of 9
www.diodes.com
January 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN4034SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4034SSS-13 | 功能描述:MOSFET MOSFET,N-CHANNEL 40V, 5.5A/- 7.2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN4036LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4036LK3_10 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4036LK3-13 | 功能描述:MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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