- 您现在的位置：买卖IC网 > Datasheet目录406 > DMN3730UFB-7 (Diodes Inc)MOSFET N-CH 30V 750MA DFN Datasheet资料下载
参数资料
| 型号： | DMN3730UFB-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 750MA DFN |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 750mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 460 毫欧 @ 200mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 64.3pF @ 25V |
| 功率 - 最大： | 470mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-UFDFN |
| 供应商设备封装： | 3-DFN |
| 包装： | 标准包装 |
| 其它名称： | DMN3730UFB-7DKR |
A Product Line of
Diodes Incorporated
DMN3730UFB
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
0.6mm package footprint, 10 times smaller than SOT23
V (BR)DSS
30V
R DS(on)
460m Ω @ V GS = 4.5V
560m Ω @ V GS = 2.5V
I D
T A = 25 ° C
0.9A
0.7A
?
?
?
?
?
?
0.5mm ultra low profile package for thin application
2
Low V GS(th), can be driven directly from a battery
Low R DS(on)
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
?
?
ESD Protected Gate 2kV
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
? Case: DFN1006-3
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
?
?
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
?
?
?
Load switch
Portable applications
Power Management Functions
?
?
?
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Drain
DFN1006-3
Body
D
S
G
Gate
Gate
Diode
ESD PROTECTED TO 2kV
Bottom View
Top View
Protection
Diode
Source
Ordering Information (Note 3)
Internal Schematic
Equivalent Circuit
Part Number
DMN3730UFB-7
DMN3730UFB-7B
Marking
NE
NE
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN3730UFB-7
DMN3730UFB-7B
NE
Top View
Dot Denotes
Drain Side
DMN3730UFB
Document number: DS35018 Rev. 3 - 2
NE
Top View
Bar Denotes Gate
and Source Side
1 of 6
www.diodes.com
NE = Product Type Marking Code
March 2011
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN3730UFB4-7 | MOSFET N-CH 30V 750MA DFN |
| DMN4027SSD-13 | MOSFET 2N-CH 40V 5.4A SO8 |
| DMN4027SSS-13 | MOSFET N-CH 40V 6A SO8 |
| DMN4030LK3-13 | MOSFET N-CH 40V 9.4A DPAK |
| DMN4031SSD-13 | MOSFET DL N-CH 40V 5.2A SO-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN3900UFA-7B | 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 25V-30V X2-DFN0806-3 T&R 10K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET N CH 30V 550MA DMN3900 |
| DMN4009LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4009LK3-13 | 功能描述:MOSFET N-CH 40V 18A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| DMN4015LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN4015LK3-13 | 功能描述:MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。