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| 型号： | DMN3730UFB-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 750MA DFN |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 750mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 460 毫欧 @ 200mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 950mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 64.3pF @ 25V |
| 功率 - 最大： | 470mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-UFDFN |
| 供应商设备封装： | 3-DFN |
| 包装： | 标准包装 |
| 其它名称： | DMN3730UFB-7DKR |
A Product Line of
Diodes Incorporated
DMN3730UFB
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±8
Unit
V
Continuous Drain Current
V GS = 4.5V
(Note 5)
T A =70°C (Note 5)
I D
0.91
0.73
A
(Note 4)
0.75
Pulsed Drain Current
(Note 6)
I DM
3
A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 4)
(Note 5)
(Note 4)
P D
R θ JA
T J , T STG
0.69
0.47
180
258
-55 to +150
W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
1
3
V
μ A
μ A
V GS = 0V, I D = 10 μ A
V DS = 30V, V GS = 0V
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V GS(th)
0.45
-
0.95
V
V DS = V GS , I D = 250 μ A
460
V GS = 4.5V, I D = 200mA
Static Drain-Source On-Resistance (Note 7)
R DS (ON)
-
-
560
m Ω
V GS = 2.5V, I D = 100mA
730
V GS = 1.8V, I D = 75mA
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
|Y fs |
V SD
40
-
-
0.7
-
1.2
mS
V
V DS = 3V, I D = 10mA
V GS = 0V, I S = 300mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
64.3
6.1
4.5
70
1.6
0.2
0.2
3.5
2.8
38
13
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V DS = 25V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 15V,
I D = 1A
V DS = 10V, I D = 1A
V GS = 10V, R G = 6 Ω
Notes:
4. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in
steady-state condition.
5. Same as note 4, except the device measured at t ≤ 10 sec.
6. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10 μ s.
7. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
DMN3730UFB
Document number: DS35018 Rev. 3 - 2
2 of 6
www.diodes.com
March 2011
? Diodes Incorporated
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