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| 型号： | DMN4800LSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 9A 8SOP |
| 产品目录绘图： | DMN Series Top DMN Series Side 1 DMN Series Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 1.6V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.47nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 798pF @ 10V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN4800LSSDIDKR |
DMN4800LSS
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
? 25
Units
V
V
Continuous Drain Current (Note 6) V GS = 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 7)
Steady
State
t<10s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I S
I DM
8.6
6.3
11.8
9.0
2.4
50
A
A
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T A = +25°C
T A = +70°C
Steady state
t<10s
T A = +25°C
T A = +70°C
Steady state
t<10s
P D
R ? JA
P D
R ? JA
R ? JC
T J, T STG
1.46
0.9
86
46
1.7
1.0
75
40
15
-55 to +150
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
?
?
?
?
?
?
1
? 100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 8)
V GS(th)
R DS (ON)
g fs
V SD
0.8
?
?
?
1.2
11
14
8
0.72
1.6
14
20
?
0.94
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 9A
V GS = 4.5V, I D = 7A
V DS = 10V, I D = 9A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C iss
C oss
C rss
R G
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
?
?
?
??
??
??
??
??
??
??
??
798
128
122
1.37
8.7
1.7
2.4
5.03
4.50
26.33
8.55
?
?
?
??
??
??
??
??
??
??
??
pF
pF
pF
?
nC
ns
V DS = 10V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V GS = 5V, V DS = 15V, I D = 9A
V DD = 15V, V GEN = 10V,
R L = 15 ? ?? R G = 6.0 ? ?? I D = 1A
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN4800LSS
Document number: DS31736 Rev. 7 - 2
2 of 6
www.diodes.com
October 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN4800LSSL-13 | MOSFET N-CH 30V 8A SO-8 |
| DMN5010VAK-7 | MOSFET DUAL N-CH 50V SOT-563 |
| DMN55D0UT-7 | MOSFET N-CH 50V 160MA SOT-523 |
| DMN5L06-7 | MOSFET N-CH 50V 280MA SOT23-3 |
| DMN5L06DMK-7 | MOSFET DUAL N-CHAN 50V SOT-26 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN4800LSSL | 制造商:Diodes Incorporated 功能描述:MOSFET N CH W DIODE 30V 8A SO8 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIODE, 30V, 8A, SO8 制造商:DIODES 功能描述:MOSFET, N CH, W DIODE, 30V, 8A, SO8, Transistor Polarity:N Channel, Continuous D 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIODE, 30V, 8A, SO8, Transistor Polarity:N Channel, Continuous Drain Current Id:6.7A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.011ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.2V , RoHS Compliant: Yes |
| DMN4800LSSL-13 | 功能描述:MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN5 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5_10 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5010VAK-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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