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| 型号： | DMN5010VAK-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL N-CH 50V SOT-563 |
| 产品变化通告： | Bond Wire Change 11/Nov/2011 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 280mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 50mA @ 5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 带卷 (TR) |
DMN5/L06VK/L06VAK/010VAK
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain Source Voltage
Drain-Gate Voltage R GS ≤ 1.0M Ω
Symbol
V DSS
V DGR
Value
50
50
Unit
V
V
Gate-Source Voltage
Drain Current (Note 6)
Continuous
Pulsed
Continuous
Pulsed
V GSS
I D
I DM
± 20
± 40
280
1.5
V
mA
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
250
500
-55 to +150
Unit
mW
° C/W
° C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
50
?
?
V
V GS = 0V, I D = 10μA
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T C = +25°C
I DSS
I GSS
?
?
?
?
60
1
500
nA
μA
nA
V DS = 50V, V GS = 0V
V GS = ±12V, V DS = 0V
V GS = ±10V, V DS = 0V
ON CHARACTERISTICS (Note 7)
50
nA
V GS = ±5V, V DS = 0V
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
V GS(th)
R DS (ON)
I D(ON)
|Y fs |
V SD
0.49
?
?
?
0.5
200
0.5
?
?
?
?
1.4
?
?
1.0
3.0
2.5
2.0
?
?
1.4
V
Ω
A
mS
V
V DS = V GS , I D = 250μA
V GS = 1.8V, I D = 50mA
V GS = 2.5V, I D = 50mA
V GS = 5.0V, I D = 50mA
V GS = 10V, V DS = 7.5V
V DS =10V, I D = 0.2A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
?
?
?
50
25
5.0
pF
pF
pF
V DS = 25V, V GS = 0V
f = 1.0MHz
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 10 - 2
2 of 6
www.diodes.com
July 2012
? Diodes Incorporated
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相关代理商/技术参数 |
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| DMN55D0UT | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN55D0UT-7 | 功能描述:MOSFET .2W 50V .16A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN5L06 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN5L06DMK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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