- 您现在的位置：买卖IC网 > Datasheet目录407 > DMN5L06DWK-7 (Diodes Inc)MOSFET DUAL N-CH 50V SOT-363 Datasheet资料下载
参数资料
| 型号： | DMN5L06DWK-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL N-CH 50V SOT-363 |
| 产品变化通告： | Copper Bond Wire Change 3/May/2011 |
| 其它图纸： | SOT-363 Package Top SOT-363 Package Side 1 SOT-363 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 305mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 50mA @ 5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN5L06DWKDIDKR |
DMN5L06DWK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
?
?
?
?
?
?
?
?
?
?
?
Dual N-Channel MOSFET
Low On-Resistance (1.0V max)
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected up to 2kV
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 standards for High Reliability
?
?
?
?
?
?
Case: SOT363
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
SOT363
D 2
S 2
G 1
G 2
S 1
D 1
ESD PROTECTED TO 2kV
Ordering Information (Note 3)
Part Number
DMN5L06DWK-7
Notes:
1. No purposefully added lead.
Top View
Case
SOT363
Top View
Internal Schematic
Packaging
3000/Tape & Reel
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DAB YM
DAB = Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
Code
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN5L06DWK
Document number: DS30930 Rev. 5 - 2
1 of 6
www.diodes.com
September 2011
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN5L06K-7 | MOSFET N-CH 50V 300MA SOT23-3 |
| DMN5L06TK-7 | MOSFET N-CH 50V 280MA SOT-523 |
| DMN5L06VA-7 | MOSFET N-CH DUAL SOT-563 |
| DMN5L06VAK-7 | MOSFET N-CHAN DUAL 50V SOT-563 |
| DMN5L06WK-7 | MOSFET N-CH 50V 300MA SC70-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN5L06K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06K_09 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN5L06K-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN5L06K-7-CUT TAPE | 制造商:DIODES 功能描述:DMN5L06K Series N-Channel 50 V 2 Ohm MosFet Surface Mount - SOT-23-3 |
| DMN5L06T | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。