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参数资料
| 型号： | DMN5L06VAK-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN DUAL 50V SOT-563 |
| 其它图纸： | SOT-563 Package Top |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 280mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 50mA @ 5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN5L06VAKDIDKR |
DMN5/L06VK/L06VAK/010VAK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) ?
ESD Protected up to 2kV
Qualified to AEC-Q101 standards for High Reliability
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Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.006 grams (approximate)
SOT563
D 2
S 2
G 1
G 2
S 1
D 1
D 2
G 2
S 1
S 2
G 1
D 1
ESD protected up to 2kV
Top View
DMN5L06VK
DMN5L06VAK
DMN5010VAK
Ordering Information (Note 4)
Part Number
DMN5L06VK-7
DMN5L06VK-13
DMN5L06VAK-7
DMN5L06VAK-13
DMN5010VAK-7
DMN5010VAK-13
Case
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
Marking Information (Note 5)
DMN5010VAK
DMN5L06VK
DMN5L06VAK
D 2
G 1
S 1
KAB= DMN5L06VK Product Type
D 2
S 1
G 1
xxx = Product Type Marking Code:
Marking Code (See Note 4)
KAE or KAC (See Note 4)
KAB YM
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
xxx YM
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
S 2
G 2
D 1
G 2
S 2
D 1
Date Code Key
Year
Code
Month
Code
2006
T
Jan
1
2007
U
Feb
2
2008
V
Mar
3
2009
W
Apr
4
2010
X
May
5
2011
Y
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 10 - 2
1 of 6
www.diodes.com
July 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN5L06VK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06VK-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN5L06W | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN5L06W-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN5L06WK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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