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参数资料
| 型号： | DMN601K-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 300MA SOT23-3 |
| 产品变化通告： | Encapsulate Change 15/May/2008 Copper Bond Wire Change 3/May/2011 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 300mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN601KDIDKR |
DMN601K
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Low On-Resistance: R DS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) ?
Qualified to AEC-Q101 standards for High Reliability
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Case: SOT23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ? Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Gate
Gate
Protection
Diode
Source
G
Top View
S
ESD PROTECTED TO 2kV
Top View
EQUIVALENT CIRCUIT
Pin Out Configuration
Ordering Information (Note 4)
Part Number
DMN601K-7
Case
SOT23
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K7K = Product Type Marking Code
Date Code Key
K7K
Chengdu A/T Site
K7K
Shanghai A/T Site
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Year
Code
Month
Code
2005
S
Jan
1
2006
T
Feb
2
2007
U
Mar
3
2008
V
2009
W
Apr
4
2010
X
May
5
2011
Y
Jun
6
2011
Y
Jul
7
2012
Z
Aug
8
2013
A
Sep
9
2014
B
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN601K
Document number: DS30652 Rev. 8 - 2
1 of 5
www.diodes.com
August 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN601TK-7 | MOSFET N-CH 60V 300MA SOT-523 |
| DMN601VK-7 | MOSFET N-CH DL 60V 250MW SOT-563 |
| DMN601WK-7 | MOSFET N-CH 60V 300MA SC70-3 |
| DMN6040SFDE-7 | MOSF N CH 60V 5.3A U DFN2020-6E |
| DMN6040SSD-13 | MOSFET N CH 60V 5A SO-8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN601K-7-F | 制造商:DIODES 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SOT-23 (LEADFREE) |
| DMN601TK | 制造商:Diodes Incorporated 功能描述:MOSFET N CH ESD 60V 0.3A SOT523 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, ESD, 60V, 0.3A, SOT523 |
| DMN601TK_09 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN601TK-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN601VK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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