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| 型号： | DMN601VK-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DL 60V 250MW SOT-563 |
| 产品变化通告： | Cooper Lead Frame Change 06/July/2007 |
| 其它图纸： | SOT-563 Package Top |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 305mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN601VKDIDKR |
DMN601VK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
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Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Up To 2kV
"Green" Device (Note 4)
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Case: SOT-563
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
SOT-563
D 2
G 1
S 1
ESD Protected up to 2kV
TOP VIEW
S 2
G 2
D 1
TOP VIEW
Internal Schematic
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
60
±20
Units
V
V
Drain Current (Note 1)
Continuous
Pulsed (Note 3)
I D
305
800
mA
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
@T A = 25°C unless otherwise specified
Symbol
P d
R θ JA
T j , T STG
Value
250
500
-65 to +150
Units
mW
°C/W
°C
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
60
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250
± 500
± 100
V
nA
nA
V GS = 0V, I D = 10 μ A
V DS = 50V, V GS = 0V
V GS = ± 10V, V DS = 0V
V GS = ± 5V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
V GS(th)
R DS (ON)
|Y fs |
V SD
1.0
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0.5
1.6
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284
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2.5
2.0
3.0
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1.4
V
Ω
ms
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 0.5A
V GS = 4.5V, I D = 200mA
V DS =10V, I D = 0.2A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
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50
25
5.0
pF
pF
pF
V DS = 25V, V GS = 0V
f = 1.0MHz
Notes:
1.
2.
3.
4.
5.
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width ≤ 10 μ S, Duty Cycle ≤ 1%.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMN601VK
Document number: DS30655 Rev. 4 - 2
1 of 4
www.diodes.com
October 2007
? Diodes Incorporated
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