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参数资料
| 型号： | DMN6040SVT-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 60V 5A TSOT26 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 44 毫欧 @ 4.3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1287pF @ 25V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 26-TSOT |
| 包装： | 标准包装 |
| 其它名称： | DMN6040SVT-7DIDKR |
DMN6040SVT
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
60V
R DS(on) max
44m Ω @ V GS = 10V
60m Ω @ V GS = 4.5V
I D
T A = 25°C
5.0A
4.3A
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100% Unclamped Inductive Switch (UIS) test in production
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
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Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
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DC-DC Converters
Power management functions
Backlighting
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Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
Drain
TSOT26
D 1
6
D
Body
Diode
Gate
D 2
5
D
Top View
G 3
Top View
4
S
Source
Equivalent Circuit
Pin Configuration
Ordering Information (Note 3)
Part Number
DMN6040SVT-7
Case
TSOT26
Packaging
3,000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
32D = Product Type Marking Code
32D
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN6040SVT
Document number: DS35562 Rev. 10 - 2
1 of 7
www.diodes.com
March 2012
? Diodes Incorporated
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PDF描述 |
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| DMN6066SSD-13 | MOSFET 2N-CH 60V 3.3A SO8 |
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| DMN6068SE-13 | MOSFET N-CH 60V 4.1A SOT223 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN6066SSD | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN6066SSD-13 | 功能描述:MOSFET MOSFET,N-CHANNEL 60V, 3.6A/- 4.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN6066SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN6066SSS-13 | 功能描述:MOSFET MOSFET,N-CHANNEL 60V, 4.1A/- 5.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN6068LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
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