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参数资料
| 型号： | DMN62D0LFB-7B |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 100MA 3-DFN |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 100mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 100mA，4V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.45nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 32pF @ 25V |
| 功率 - 最大： | 470mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-UFDFN |
| 供应商设备封装： | 3-X1DFN1006 |
| 包装： | 标准包装 |
| 其它名称： | DMN62D0LFB-7BDIDKR |
DMN62D0LFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
60V
R DS(ON)
2 ? @ V GS = 4V
2.5 ? @ V GS = 2.5V
I D
T A = 25°C
100mA
50mA
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Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Lead Free By Design/RoHS Compliant (Note 1)
Description and Applications
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"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET has been designed to minimize the on-
Mechanical Data
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
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DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
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Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ? NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Memories, Transistors, etc.
Drain
X1-DFN1006-3
Gate
S
D
G
Gate
Protection
Source
Diode
ESD PROTECTED
Bottom View
Top View
Equivalent Circuit
Pin-Out
Ordering Information (Note 3)
Product
DMN62D0LFB-7
DMN62D0LFB-7B
Marking
NK
NK
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN62D0LFB-7
DMN62D0LFB-7B
NK
NK
NK = Product Type Marking Code
Top View
Dot Denotes Drain Side
Top View
Bar Denotes Gate and Source Side
DMN62D0LFB
Document number: DS35409 Rev. 2 - 2
1 of 6
www.diodes.com
October 2011
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN62D0SFD-7 | MOSFET N-CH 60V 540MA 3-DFN |
| DMN65D8LDW-7 | MOSF N CH DUAL 60V 180MA SOT363 |
| DMN65D8LFB-7B | MOSF N CH 60V 260MA X1-DFN1006-3 |
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| DMN66D0LDW-7 | MOSFET N-CH DUAL 115MA SOT-363 |
相关代理商/技术参数 |
参数描述 |
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| DMN62D0SFD-7 | 功能描述:两极晶体管 - BJT MOSFET BVDSS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| DMN62D1SFB-7B | 功能描述:MOSFET MOSFET BVDSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN63D0LT-7 | 功能描述:MOSFET MOSFET BVDSS: 61V-10 V-100V SOT523 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN63D8LDW-13 | 制造商:Diodes Incorporated 功能描述:MOSF N CH DL 30V 220MA SOT363 |
| DMN63D8LDW-7 | 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 41V-60V SOT363 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET N CH DL 30V 220MA SOT363 |
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