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| 型号： | DMN65D8LDW-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSF N CH DUAL 60V 180MA SOT363 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 180mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 欧姆 @ 115mA，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.87nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 22pF @ 25V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 其它名称： | DMN65D8LDW-7DIDKR |
DMN65D8LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V (BR)DSS
60V
R DS(ON)
8 ? @ V GS = 5V
6 ? @ V GS = 10V
Package
SOT363
I D
T A = +25°C
170mA
200mA
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Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
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ESD Protected Gate, 1KV (HBM)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) ?
Qualified to AEC-Q101 Standards for High Reliability
applications.
Mechanical Data
Applications
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Case: SOT363
Case Material: Molded Plastic. UL Flammability Classification
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DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
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Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208 e3
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
ESD PROTECTED TO 1kV
SOT363
Top View
D 2
S 2
G 1
G 2
Top View
S 1
D 1
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN65D8LDW -7
Case
SOT363
Packaging
3000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
MM1= Product Type Marking Code
MM1 YM
MM1 YM
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2007
U
Jan
1
2008
V
Feb
2
2009
W
Mar
3
2010
X
Apr
4
2011
Y
May
5
2012
Z
Jun
6
2013
A
Jul
7
2014
B
Aug
8
2015
C
Sep
9
2016
D
Oct
O
2017
E
Nov
N
2018
F
Dec
D
DMN65D8LDW
Document number: DS35500 Rev. 6 - 2
1 of 6
www.diodes.com
January 2014
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN65D8LFB-7B | 功能描述:MOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN65D8LW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN65D8LW-7 | 功能描述:MOSFET MOSFET BVDSS: 61V-10 100V SOT323 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN66D0LDW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN66D0LDW-7 | 功能描述:MOSFET 250mW 60Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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