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| 型号： | DMN66D0LT-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 115MA SOT-523 |
| 产品目录绘图： | SOT-523 Package Top SOT-523 Package Side 1 SOT-523 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 115mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 欧姆 @ 115mA，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 23pF @ 25V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-523 |
| 供应商设备封装： | SOT-523 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN66D0LTDIDKR |
DMN66D0LT
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1KV (HBM)
Lead Free/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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SOT-523
Case: SOT-523
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.002 grams (approximate)
Drain
D
Gate
Gate
Protection
Diode
Source
G
S
ESD PROTECTED, 1KV
TOP VIEW
EQUIVALENT CIRCUIT
TOP VIEW
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Characteristic
Symbol
V DSS
Value
60
Units
V
Gate-Source Voltage (Note 1)
Drain Current (Note 1)
Continuous
Continuous
Continuous @ 100°C
V GSS
I D
±20
115
73
V
mA
Pulsed
800
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
200
625
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
BV DSS
60
70
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V
V GS = 0V, I D = 10 μ A
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T C = 25°C
@ T C = 125°C
I DSS
I GSS
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1.0
500
±5
μA
μ A
V DS = 60V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(th)
1.2
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2.0
V
V DS = V GS , I D = 250 μ A
Static Drain-Source On-Resistance
Forward Transconductance
@ T J = 25°C
@ T J = 125°C
R DS (ON)
g FS
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80
3.5
3.0
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6
5
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Ω
mS
V GS = 5.0V, I D = 0.115A
V GS = 10V, I D = 0.115A
V DS = 10V, I D = 0.115A
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
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23
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pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
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3.4
1.4
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pF
pF
V DS = 25V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
t D(ON)
t D(OFF)
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10
33
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ns
ns
V DD = 30V, I D = 0.115A, R L = 150 Ω ,
V GEN = 10V , R GEN = 25 Ω
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Short duration pulse test used to minimize self-heating effect.
DMN66D0LT
Document number: DS31530 Rev. 2 - 2
1 of 4
www.diodes.com
September 2008
? Diodes Incorporated
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