参数资料
型号: DMP1245UFCL-7
厂商: Diodes Inc
文件页数: 1/7页
文件大小: 0K
描述: MOSFET P-CH 12V 6.6A 6-UFDFN
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 12V
电流 - 连续漏极(Id) @ 25° C: 6.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 29 毫欧 @ 4A,4.5V
Id 时的 Vgs(th)(最大): 950mV @ 250µA
闸电荷(Qg) @ Vgs: 26.1nC @ 8V
输入电容 (Ciss) @ Vds: 1357.4pF @ 10V
功率 - 最大: 613mW
安装类型: 表面贴装
封装/外壳: 6-UFDFN 裸露焊盘
供应商设备封装: 6-DFN1616(1.6x1.6)
包装: 标准包装
其它名称: DMP1245UFCL-7DIDKR
A Product Line of
Diodes Incorporated
DMP1245UFCL
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Summary
Features and Benefits
PCB footprint of 2.56mm
V (BR)DSS
-12V
R DS(on) max
29m Ω @V GS = -4.5V
45m Ω @V GS = -2.5V
60m Ω @V GS = -1.8V
100m Ω @V GS = -1.5V
I D max
-6.6 A
-5.3 A
-4.6 A
-3.5 A
?
?
?
?
?
?
Typical off board profile of 0.5mm - ideally suited for thin
applications
Low R DS(ON) – minimizes conduction losses
2
3kV ESD Protected Gate – protected against human borne
ESD
“Lead-Free”, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Application
Mechanical Data
This device provides a high performance, low R DS(ON) P channel
MOSFETs in the thermally and space efficient X1-DFN1616-6
package. The low R DS(ON) of this MOSFET ensures conduction
losses are kept making it ideal for use as a:
?
?
?
?
Case: X1-DFN1616-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Lead Free Plating (NiPdAu Finish over Copper leadframe).
?
?
Battery disconnect switch
Load switch for power management functions
X1-DFN1616-6
Type E
?
?
Pin 1
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 0.04 grams (approximate)
Drain
Gate
Gate
Protection
Diode
Source
Top View
Bottom View
Device symbol
Top View
Pin-Out
Ordering Information (Note 3)
Product
DMP1245UFCL-7
Marking
P5
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
Notes:
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
P5
YM
P5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Year
Code
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
1 of 7
www.diodes.com
November 2011
? Diodes Incorporated
相关PDF资料
PDF描述
DMP2004DMK-7 MOSFET DUAL P-CH 20V SOT-26
DMP2004DWK-7 MOSFET DUAL P-CH 20V SOT-363
DMP2004K-7 MOSFET P-CH 20V 600MA SOT23-3
DMP2004TK-7 MOSFET P-CH 20V 430MA SOT-523
DMP2004VK-7 MOSFET P-CH DUAL 530MA SOT-563
相关代理商/技术参数
参数描述
DMP1-4801 功能描述:PWR SPLY 50W 1.09A 48VDC DINRAIL RoHS:否 类别:电源 - 外部/内部(非板载) >> AC DC 转换器 系列:DM 产品培训模块:MP Modular-Configurable AC-DC Power Supply 特色产品:Configurable Power Supplies 标准包装:1 系列:MP
DMP1-504 功能描述:PWR SPLY 20W 4.4A 5VDC DIN-RAIL RoHS:否 类别:电源 - 外部/内部(非板载) >> AC DC 转换器 系列:DM 产品培训模块:MP Modular-Configurable AC-DC Power Supply 特色产品:Configurable Power Supplies 标准包装:1 系列:MP
DMP1555UFA-7B 功能描述:MOSFET P-CH 12V 0.2A X2DFN-3 制造商:diodes incorporated 系列:- 包装:剪切带(CT) 零件状态:在售 FET 类型:P 沟道 技术:MOSFET(金属氧化物) 漏源电压(Vdss):12V 电流 - 连续漏极(Id)(25°C 时):200mA(Ta) 驱动电压(最大 Rds On,最小 Rds On):1.5V,4.5V 不同 Id 时的 Vgs(th)(最大值):1V @ 250μA 不同 Vgs 时的栅极电荷?(Qg)(最大值):0.84nC @ 4.5V Vgs(最大值):±8V 不同 Vds 时的输入电容(Ciss)(最大值):55.4pF @ 10V FET 功能:- 功率耗散(最大值):360mW(Ta) 不同?Id,Vgs 时的?Rds On(最大值):800 毫欧 @ 200mA,4.5V 工作温度:-55°C ~ 150°C(TJ) 安装类型:表面贴装 供应商器件封装:X2-DFN0806-3 封装/外壳:3-XFDFN 标准包装:1
DMP1610A 制造商:Crydom 功能描述:
DM-P1S-1P-Z 制造商:Alpha 3 Manufacturing 功能描述: