参数资料
型号: DMN66D0LT-7
厂商: Diodes Inc
文件页数: 4/4页
文件大小: 0K
描述: MOSFET N-CH 60V 115MA SOT-523
产品目录绘图: SOT-523 Package Top
SOT-523 Package Side 1
SOT-523 Package Side 2
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 115mA
开态Rds(最大)@ Id, Vgs @ 25° C: 5 欧姆 @ 115mA,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
输入电容 (Ciss) @ Vds: 23pF @ 25V
功率 - 最大: 200mW
安装类型: 表面贴装
封装/外壳: SOT-523
供应商设备封装: SOT-523
包装: 标准包装
产品目录页面: 1577 (CN2011-ZH PDF)
其它名称: DMN66D0LTDIDKR

DMN66D0LT
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
1.8
Z
X
E
C
X
Y
C
E
0.4
0.51
1.3
0.7
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN66D0LT
Document number: DS31530 Rev. 2 - 2
4 of 4
www.diodes.com
September 2008
? Diodes Incorporated
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