- 您现在的位置：买卖IC网 > Datasheet目录407 > DMP1022UFDE-7 (Diodes Inc)MOSF P CH 12V U-DFN2020-6 TYPE E Datasheet资料下载
参数资料
| 型号： | DMP1022UFDE-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSF P CH 12V U-DFN2020-6 TYPE E |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 8.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 800mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 42.6nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2953pF @ 4V |
| 功率 - 最大： | 660mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UDFN 裸露焊盘 |
| 供应商设备封装： | 6-UDFN2020（2x2） |
| 包装： | 标准包装 |
| 其它名称： | DMP1022UFDE-7DIDKR |
DMP1022UFDE
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
PCB footprint of 4mm
V (BR)DSS
-12V
R DS(ON) max
16m Ω @ V GS = -4.5V
21.5m ? @ V GS = -2.5V
26m ? @ V GS = -1.8V
I D max
T A = 25°C
-9.1A
-7.9A
-7.0A
?
?
?
?
?
?
?
?
0.6mm profile – ideal for low profile applications
2
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected to 3KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
32m ? @ V GS = -1.5V
-6.3A
Mechanical Data
Description
This MOSFET has been designed specifically for use in battery
management applications.
?
?
?
?
?
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
Drain
U-DFN2020-6
Type E
Pin1
6 D
5 D
D 1
D 2
Gate
Gate
4 S
S
G 3
Protection
Diode
Source
ESD PROTECTED
Bottom View
Pin Out
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMP1022UFDE-7
Marking
P4
Reel size (inches)
7
Quantity per reel
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
P4 = Product Type Marking Code
P4
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMP1022UFDE
D atasheet number: DS35477 Rev. 9 - 2
1 of 7
www.diodes.com
July 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMP1096UCB4-7 | MOSFET P-CH 12V 2.6A 4-UFCSP |
| DMP1245UFCL-7 | MOSFET P-CH 12V 6.6A 6-UFDFN |
| DMP2004DMK-7 | MOSFET DUAL P-CH 20V SOT-26 |
| DMP2004DWK-7 | MOSFET DUAL P-CH 20V SOT-363 |
| DMP2004K-7 | MOSFET P-CH 20V 600MA SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMP1045U | 制造商:Diodes Incorporated 功能描述:MOSFET P CH W ESD 12V SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, W ESD, 12V, SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, W ESD, 12V, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-0.55V ;RoHS Compliant: Yes |
| DMP1045U-7 | 功能描述:MOSFET MOSFET BVDSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP1045UFY4-7 | 功能描述:MOSFET MOSFET BVDSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP1080UCB4-7 | 功能描述:MOSFET P-Ch Enh Mode FET 80mOhm -12V -3.3A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP1096UCB4-7 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V U-WLB1010-4,3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。