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参数资料
| 型号： | DMP1022UFDE-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSF P CH 12V U-DFN2020-6 TYPE E |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 8.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 800mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 42.6nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2953pF @ 4V |
| 功率 - 最大： | 660mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UDFN 裸露焊盘 |
| 供应商设备封装： | 6-UDFN2020（2x2） |
| 包装： | 标准包装 |
| 其它名称： | DMP1022UFDE-7DIDKR |
DMP1022UFDE
1
D = 0.7
D = 0.5
D = 0.3
0.1
0.01
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = 0.9
R θ JA (t)=r(t) * R θ JA
R θ JA =61°C/W
Duty Cycle, D=t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01 0.1 1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
-12
—
—
—
—
—
—
-1
±2
V
μA
μA
V GS = 0V, I D = -250 μ A
V DS = -12V, V GS = 0V
V GS = ±5V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th) Temperature Coefficient
On-State Drain Current
V GS(th)
Δ V GS(th) / Δ T J
I D(ON)
-0.35
-
-10
—
2.5
—
-0.8
—
—
V
mV/°C
A
V DS = V GS , I D = -250 μ A
I D = -250 μ A
V GS = -4.5V, V DS < -5A
12
15
16
21.5
V GS = -4.5V, I D = -8.2A
V GS = -2.5V, I D = -7.2A
Static Drain-Source On-Resistance
R DS (ON)
—
20
26
m Ω
V GS = -1.8V, I D = -6.6A
23
46
32
95
V GS = -1.5V, I D = -1A
V GS = -1.2V, I D = -1A
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
—
—
12
-0.8
-
-1.2
S
V
V DS = -4V, I D = -8.2A
V GS = 0V, I S = -8A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
—
—
2953
756
678
8.6
28.4
25.3
2.3
7.2
20
28
117
93
—
—
—
18
42.6
38
—
—
30
42
176
139
pF
?
nC
ns
V DS = -4V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = -5V, V DS = -4, I D = -10A
V GS = -4.5V, V DS = -4V,
I D = -10A
V DS = -4V, V GS = -4.5V,
R G = 1 ? , R L = 0.4 ? , I D = -9.8A
BODY DIODE CHARACTERISTICS
Diode Forward Voltage
Continuous Source-Drain Diode Current (Note 6)
Pulse Diode Forward Current (Note 8)
Bodyy Diode Reverse Recovery Time (Note 8)
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Body Diode Reverse Recovery Charge (Note 8)
V SD
I S
I SM
t rr
t a
t b
Q rr
—
—
—
—
—
—
—
—
-0.8
—
—
—
28
10
18
13
-1.2
-2.5
-7.1
-50
56
—
—
26
V
A
ns
nC
V GS = 0V, I S = -9.8A
T A = +25°C
T C = +25°C
—
I S = -9.8A, dI/dt = 100A/ μ s
Notes:
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing
DMP1022UFDE
D atasheet number: DS35477 Rev. 9 - 2
3 of 7
www.diodes.com
July 2012
? Diodes Incorporated
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