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参数资料
| 型号： | DMN65D8LW-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 60V 300MA SOT323 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 300mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 欧姆 @ 115mA，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.87nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 22pF @ 25V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SOT-323 |
| 包装： | 标准包装 |
| 其它名称： | DMN65D8LW-7DIDKR |
DMN65D8LW
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V (BR)DSS
R DS(ON)
Package
I D
T A = +25°C
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?
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
3 ? @ V GS = 10V
60V
4 ? @ V GS = 5V
Description
SOT323
300mA
260mA
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Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1KV (HBM)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) ?
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
? Case: SOT323
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Case Material: Molded Plastic. UL Flammability Classification
Applications
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Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
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DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
SOT323
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Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Drain
D
Gate
G
S
Gate
Protection
Diode
Source
ESD PROTECTED TO 1kV
Top View
Top View
Equivalent Circuit
Pin Configuration
Ordering Information (Note 4)
Part Number
DMN65D8LW -7
Case
SOT323
Packaging
3000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
MM3 = Product Type Marking Code
MM3
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN65D8LW
Document number: DS35639 Rev. 4 - 2
1 of 5
www.diodes.com
July 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN66D0LDW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN66D0LDW-7 | 功能描述:MOSFET 250mW 60Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN66D0LT | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN66D0LT-7 | 功能描述:MOSFET NMOS-Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN66D0LW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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