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| 型号： | DMN66D0LDW-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 115MA SOT-363 |
| 产品变化通告： | Wire Change 23/May/2008 |
| 其它图纸： | SOT-363 Package Top SOT-363 Package Side 1 SOT-363 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 115mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 欧姆 @ 115mA，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 23pF @ 25V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN66D0LDWDIDKR |
DMN66D0LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
60V
R DS(ON)
6 ? @ V GS = 5V
5 ? @ V GS = 10V
Package
SOT363
I D
T A = +25°C
90mA
115mA
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Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R DS(ON) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1KV (HBM)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) ?
Qualified to AEC-Q101 Standards for High Reliability
Applications
Mechanical Data
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Load Switch
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Case: SOT363
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
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Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
ESD PROTECTED TO 1kV
SOT363
D 2
S 2
G 1
G 2
S 1
D 1
Ordering Information (Note 4)
Top View
Top View
Internal Schematic
Part Number
DMN66D0LDW -7
Case
SOT363
Packaging
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MN1
YM
MN1
YM
MN1= Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN66D0LDW
Document number: DS31232 Rev. 6 - 2
1 of 5
www.diodes.com
February 2014
? Diodes Incorporated
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| DMN66D0LT | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
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