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| 型号： | DMN66D0LDW-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 115MA SOT-363 |
| 产品变化通告： | Wire Change 23/May/2008 |
| 其它图纸： | SOT-363 Package Top SOT-363 Package Side 1 SOT-363 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 115mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 欧姆 @ 115mA，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 23pF @ 25V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN66D0LDWDIDKR |
DMN66D0LDW
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Symbol
V DSS
Value
60
Units
V
Gate-Source Voltage (Note 5)
Drain Current (Note 5)
Continuous
Continuous
Continuous @ +100°C
Pulsed
V GSS
I D
±20
115
73
800
V
mA
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Derating above T A = +25°C (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
250
1.6
500
-55 to +150
Units
mW
mW/°C
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
60
70
?
V
V GS = 0V, I D = 10μA
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T C = +25°C
@ T C = +125°C
I DSS
I GSS
?
?
?
?
1.0
500
±5
μA
μ A
V DS = 60V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
1.2
?
2.0
V
V DS = V GS , I D = 250 μ A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
@ T J = +25°C
@ T J = +125°C
R DS (ON)
g FS
V SD
?
80
?
3.5
3.0
V SD
0.8
6
5
?
1.2
Ω
mS
V
V GS = 5.0V, I D = 0.115A
V GS = 10V, I D = 0.115A
V DS = 10V, I D = 0.115
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
23
?
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
?
?
3.4
1.4
?
?
pF
pF
V DS = 25V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
t D(ON)
t D(OFF)
?
?
10
33
?
?
ns
ns
V DD = 30V, I D = 0.115A, R L = 150 Ω ,
V GEN = 10V , R GEN = 25 Ω
Notes:
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
DMN66D0LDW
Document number: DS31232 Rev. 6 - 2
2 of 5
www.diodes.com
February 2014
? Diodes Incorporated
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