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| 型号： | DMN65D8LW-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 60V 300MA SOT323 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 300mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 欧姆 @ 115mA，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.87nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 22pF @ 25V |
| 功率 - 最大： | 350mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SOT-323 |
| 包装： | 标准包装 |
| 其它名称： | DMN65D8LW-7DIDKR |
DMN65D8LW
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
60
±20
Units
V
V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 6) V GS = 5V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 6)
Steady
State
Steady
State
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I DM
I S
300
230
260
210
800
1
mA
mA
mA
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 5)
P D
R θ JA
R θ JC
T J, T STG
300
432
398
290
142
-55 to +150
mW
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
60
?
?
?
?
?
?
1.0
±5.0
V
μA
μA
V GS = 0V, I D = 250μA
V DS = 60V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V GS(th)
R DS (ON)
g FS
V SD
1.2
?
?
80
-
?
2
2.5
290
0.8
2.0
3
4
?
1.2
V
Ω
Ω
mS
V
V DS = V GS , I D = 250μA
V GS = 10V, I D = 0.115A
V GS = 5V, I D = 0.115A
V DS = 10V, I D = 0.115A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C iss
?
22.0
?
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge V GS = 10V
Total Gate Charge V GS = 4.5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C oss
C rss
R G
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
?
3.2
2.0
79.9
0.87
0.43
0.11
0.11
2.7
2.8
12.6
7.3
?
?
?
?
?
?
?
?
?
?
?
pF
Ω
nC
nS
V DS = 25V, V GS = 0V, f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V GS = 10V, V DS = 30V,
I D = 150mA
V DD = 30V, I D = 0.115A, V GEN = 10V ,
R GEN = 25 Ω
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN65D8LW
Document number: DS35639 Rev. 4 - 2
2 of 5
www.diodes.com
July 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
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| DMN66D0LDW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN66D0LDW-7 | 功能描述:MOSFET 250mW 60Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN66D0LT | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN66D0LT-7 | 功能描述:MOSFET NMOS-Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN66D0LW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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